SSF2N60 600v n-channel mosfet www.goodark.com page 1 of 7 rev.1.0 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 2 i d @ tc = 100c continuous drain current, v gs @ 10v 1.3 i dm pulsed drain current 8 a power dissipation 54 w p d @tc = 25c linear derating factor 0.43 w/c v ds drain-source voltage 600 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=55mh 110 mj i as avalanche current @ l=55mh 2 a t j t stg operating junction and storage temperature range -55 to + 150 c v dss 600v r ds (on) 3.6ohm(typ.) i d 2a to-220 marking and pin assignment schematic diagram ? advanced process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature ? lead free product these n-channel enhancement mode power field effect transistors are produced using proprietary mosfet technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supplies.
SSF2N60 600v n-channel mosfet www.goodark.com page 2 of 7 rev.1.0 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 2.32 /w junction-to-ambient (t 10s) 62 /w r ja junction-to-ambient (pcb mounted, steady-state) 40 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 v v gs = 0v, id = 250a 3.6 4 v gs =10v,i d = 1a r ds(on) static drain-to-source on-resistance 8.01 t j = 125 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.17 v t j = 125 1 v ds = 600v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125 100 v gs =30v i gss gate-to-source forward leakage -100 na v gs = -30v q g total gate charge 11.5 q gs gate-to-source charge 2.7 q gd gate-to-drain("miller") charge 4.5 nc i d = 2a, v ds =480v, v gs = 10v t d(on) turn-on delay time 9.4 t r rise time 7.4 t d(off) turn-off delay time 25.4 t f fall time 20.8 ns v gs =10v, vds=300v, r l =150, r gen =25 id=2a c iss input capacitance 323 c oss output capacitance 40 c rss reverse transfer capacitance 5 pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 2 a i sm pulsed source current (body diode) 8 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.86 1.3 v i s =2a, v gs =0v t rr reverse recovery time 259.3 ns q rr reverse recovery charge 1419 nc t j = 25c, i f =2a, di/dt = 100a/s
SSF2N60 600v n-channel mosfet www.goodark.com page 3 of 7 rev.1.0 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the maximum current rating is limited by bond-wires.
SSF2N60 600v n-channel mosfet www.goodark.com page 4 of 7 rev.1.0 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. temperature figure 4: normalized on-resistance vs. case temperature
SSF2N60 600v n-channel mosfet www.goodark.com page 5 of 7 rev.1.0 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6.typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance, junction-to-case
SSF2N60 600v n-channel mosfet www.goodark.com page 6 of 7 rev.1.0 mechanical data min nom max min nom max a - 1.300 - - 0.051 - a1 2.200 2.400 2.600 0.087 0.094 0.102 b - 1.270 - - 0.050 - b1 1.270 1.370 1.470 0.050 0.054 0.058 c - 0.500 - - 0.020 - d - 15.600 - - 0.614 - d1 - 28.700 - - 1.130 - d2 - 9.150 - - 0.360 - e 9.900 10.000 10.100 0.390 0.394 0.398 e1 - 10.160 - - 0.400 - p - 3.600 - - 0.142 - p1 1.500 0.059 e l 12.900 13.100 13.300 0.508 0.516 0.524 ? 1 - 7 0 - - 7 0 - ? 2 - 7 0 - - 7 0 - ? 3 - 3 0 - 5 0 7 0 9 0 ? 4 - 3 0 - 1 0 3 0 5 0 symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc to-220 package outline dimension_gn e d d1 p a ? 1 d2 a1 c e b b1 ? 2 ? l ? 4 p1 e
SSF2N60 600v n-channel mosfet www.goodark.com page 7 of 7 rev.1.0 ordering and marking information device marking: SSF2N60 package (available) to-220 operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to-220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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